BSO201SPNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±12V

Published :

2001

Current - Continuous Drain (Id) @ 25°C :

14.9A Ta

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Continuous Drain Current (ID) :

14.9A

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

8m Ω @ 14.9A, 4.5V

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pulsed Drain Current-Max (IDM) :

59.6A

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

20V

Number of Terminations :

8

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

5962pF @ 15V

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 4.5V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Terminal Form :

Gull wing