BSO203SP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-On Delay Time :

15.6 ns

Gate to Source Voltage (Vgs) :

12 V

Turn-Off Delay Time :

58 ns

Rds On Max :

4 mΩ

Terminal Position :

Dual

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

20 V

Number of Terminals :

8

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Current Rating :

-9 A

RoHS :

Compliant

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3750 pF @ 15 V

Vgs (Max) :

±12V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

1.6W (Ta)

Voltage Rating (DC) :

-20 V

Technology :

MOSFET (Metal Oxide)

Max Operating Temperature :

150 °C

Qualification Status :

Not Qualified

Series :

OptiMOS®

FET Feature :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

97 mJ

Surface Mount :

yes

Reach Compliance Code :

Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Channel Type :

P

Supplier Device Package :

PG-DSO-8

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Continuous Drain Current (ID) :

9 A

Number of Elements :

1

Input Capacitance :

2.38 nF

Factory Lead Time :

1 Week

Terminal Finish :

Tin/Lead (Sn/Pb)

Gate Charge (Qg) (Max) @ Vgs :

39 nC @ 4.5 V

Manufacturer :

Infineon Technologies AG

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.021 Ω

JESD-30 Code :

R-PDSO-G8

Drain to Source Voltage (Vdss) :

30 V

Pbfree Code :

No

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

Packaging :

Digi-Reel®

Drain Current-Max (Abs) (ID) :

9 A

Power Dissipation-Max (Abs) :

2.35 W

FET Type :

P-Channel

Mounting Type :

Surface Mount

Package :

Bulk

Drain to Source Resistance :

21 mΩ

Rise Time :

27 ns

Package Shape :

RECTANGULAR

HTS Code :

8541.29.00.95

Continuous Drain Current Id :

9

Rds On (Max) @ Id, Vgs :

21mOhm @ 8.9A, 4.5V

Max Power Dissipation :

6.2 W

JESD-609 Code :

e0

Min Operating Temperature :

-55 °C

Pin Count :

8

Number of Pins :

8

Subcategory :

Other Transistors

Polarity/Channel Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

-20 V

Pulsed Drain Current-Max (IDM) :

36 A

Power Dissipation :

2.35 W

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

7A (Ta)

Vgs(th) (Max) @ Id :

1.2V @ 50µA