BSO203SP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

8

Avalanche Energy Rating (Eas) :

97 mJ

DS Breakdown Voltage-Min :

20 V

Max Operating Temperature :

150 °C

Continuous Drain Current (ID) :

9 A

Technology :

MOSFET (Metal Oxide)

Current Rating :

-9 A

Continuous Drain Current Id :

9

Min Operating Temperature :

-55 °C

Channel Type :

P

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Rds On Max :

4 mΩ

Transistor Application :

SWITCHING

Terminal Position :

Dual

Factory Lead Time :

1 Week

Max Power Dissipation :

6.2 W

Rds On (Max) @ Id, Vgs :

21mOhm @ 8.9A, 4.5V

Number of Pins :

8

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3750 pF @ 15 V

ECCN Code :

EAR99

Surface Mount :

yes

Polarity/Channel Type :

P-Channel

Vgs(th) (Max) @ Id :

1.2V @ 50µA

FET Feature :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

36 A

JESD-30 Code :

R-PDSO-G8

Voltage Rating (DC) :

-20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

Input Capacitance :

2.38 nF

Terminal Finish :

Tin/Lead (Sn/Pb)

Manufacturer :

Infineon Technologies AG

Drain to Source Resistance :

21 mΩ

Current - Continuous Drain (Id) @ 25°C :

7A (Ta)

Drain Current-Max (Abs) (ID) :

9 A

Power Dissipation (Max) :

1.6W (Ta)

Drain to Source Voltage (Vdss) :

30 V

HTS Code :

8541.29.00.95

Subcategory :

Other Transistors

Vgs (Max) :

±12V

Product Status :

Active

Turn-Off Delay Time :

58 ns

Drain-source On Resistance-Max :

0.021 Ω

Number of Elements :

1

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

27 ns

Packaging :

Digi-Reel®

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

2.35 W

Package Shape :

RECTANGULAR

RoHS :

Compliant

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

39 nC @ 4.5 V

Gate to Source Voltage (Vgs) :

12 V

Drain to Source Breakdown Voltage :

-20 V

Turn-On Delay Time :

15.6 ns

Package :

Bulk

JESD-609 Code :

e0

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C ~ 150°C (TJ)

Reach Compliance Code :

Compliant

Supplier Device Package :

PG-DSO-8

Power Dissipation :

2.35 W

Transistor Element Material :

SILICON

Series :

OptiMOS®

Pbfree Code :

No

Mount :

Surface Mount