BSO211PHXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1095pF @ 15V

Series :

OptiMOS™

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Published :

2011

Gate to Source Voltage (Vgs) :

12V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Rise Time :

13ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

8

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

8

Continuous Drain Current (ID) :

4A

Rds On (Max) @ Id, Vgs :

67m Ω @ 4.6A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.067Ohm

Power Dissipation :

1.6W

Transistor Element Material :

SILICON

Base Part Number :

BSO211

Weight :

540.001716mg

Vgs(th) (Max) @ Id :

1.2V @ 25µA

Max Power Dissipation :

1.6W

Max Dual Supply Voltage :

-20V

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Number of Elements :

2

Mount :

Surface Mount