BSO211P
- Mfr.Part #
- BSO211P
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- P-CHANNEL POWER MOSFET
- Stock
- 20,000
- In Stock :
- 20,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Rds On Max :
- 67 mΩ
- Terminal Position :
- Dual
- Channel Type :
- Dual P
- JESD-30 Code :
- R-PDSO-G8
- FET Type :
- 2 P-Channel (Dual)
- Avalanche Energy Rating (Eas) :
- 28 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 23.9nC @ 4.5V
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 67mOhm @ 4.7A, 4.5V
- Gate to Source Voltage (Vgs) :
- 12 V
- Rise Time :
- 10.6 ns
- Pbfree Code :
- No
- Product Status :
- Active
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Unknown
- Number of Terminals :
- 8
- Max Operating Temperature :
- 150 °C
- Continuous Drain Current (ID) :
- 4.7 A
- Power Dissipation :
- 2 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 15V
- Surface Mount :
- yes
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Max Power Dissipation :
- 2 W
- Qualification Status :
- COMMERCIAL
- Pin Count :
- 8
- Manufacturer :
- Rochester Electronics LLC
- Turn-Off Delay Time :
- 26.3 ns
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.067 Ω
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Turn-On Delay Time :
- 7.8 ns
- Package :
- Bulk
- Transistor Application :
- SWITCHING
- Terminal Finish :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 18.8 A
- Min Operating Temperature :
- -55 °C
- DS Breakdown Voltage-Min :
- 20 V
- Packaging :
- Tape and Reel
- Drain to Source Breakdown Voltage :
- -20 V
- FET Feature :
- Logic Level Gate
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Power - Max :
- 2W
- Vgs(th) (Max) @ Id :
- 1.2V @ 25µA
- Polarity/Channel Type :
- P-Channel
- Number of Pins :
- 8
- Drain to Source Resistance :
- 67 mΩ
- Current Rating :
- -4.7 A
- RoHS :
- Compliant
- Series :
- OptiMOS™
- Supplier Device Package :
- PG-DSO-8
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 20 V
- Voltage Rating (DC) :
- -20 V
- Number of Elements :
- 2
- Input Capacitance :
- 920 pF
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 4.7A
- Datasheets
- BSO211P

2 P-Channel (Dual) Tape & Reel 67mOhm @ 4.7A, 4.5V 920pF @ 15V 23.9nC @ 4.5V 20 V 8-SOIC (0.154, 3.90mm Width)
BSO211P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 28 mJ.A device's maximal input capacitance is 920pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.7 A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20 V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 26.3 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 18.8 A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 67 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12 V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20 V.This transistor requires a 20 V drain to source voltage (Vdss).
BSO211P Features
the avalanche energy rating (Eas) is 28 mJ
a continuous drain current (ID) of 4.7 A
a drain-to-source breakdown voltage of -20 V voltage
the turn-off delay time is 26.3 ns
based on its rated peak drain current 18.8 A.
single MOSFETs transistor is 67 mΩ
a 20 V drain to source voltage (Vdss)
BSO211P Applications
There are a lot of Infineon
BSO211P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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