BFU550WF

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Voltage - Collector Emitter Breakdown (Max) :

12V

Factory Lead Time :

13 Weeks

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOW NOISE

JESD-30 Code :

R-PDSO-G3

Gain :

12dB

Pin Count :

3

Operating Temperature :

-40°C~150°C TJ

Frequency - Transition :

11GHz

Package / Case :

SC-70, SOT-323

Power - Max :

450mW

Current - Collector (Ic) (Max) :

50mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 15mA 8V

Terminal Position :

Dual

Transistor Application :

AMPLIFIER

Number of Terminations :

3

Transition Frequency :

11000MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Configuration :

Single

Number of Elements :

1

Noise Figure (dB Typ @ f) :

1.3dB @ 1.8GHz

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Published :

2010

Highest Frequency Band :

L B

Reference Standard :

AEC-Q101; IEC-60134

Mounting Type :

Surface Mount

Transistor Type :

NPN

Base Part Number :

BFU550