BFU550WF

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Terminal Position :

Dual

Frequency - Transition :

11GHz

Additional Feature :

LOW NOISE

Current - Collector (Ic) (Max) :

50mA

Pin Count :

3

Package / Case :

SC-70, SOT-323

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Noise Figure (dB Typ @ f) :

1.3dB @ 1.8GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 15mA 8V

Reference Standard :

AEC-Q101; IEC-60134

Packaging :

Tape and Reel (TR)

Factory Lead Time :

13 Weeks

Mounting Type :

Surface Mount

Transition Frequency :

11000MHz

Number of Terminations :

3

Highest Frequency Band :

L B

Operating Temperature :

-40°C~150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

12V

Configuration :

Single

Gain :

12dB

Published :

2010

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Power - Max :

450mW

JESD-30 Code :

R-PDSO-G3

Polarity/Channel Type :

NPN

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

BFU550

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Terminal Form :

Gull wing