BFU520WF

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Factory Lead Time :

13 Weeks

JESD-30 Code :

R-PDSO-G3

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Number of Terminations :

3

Gain :

13dB

Package / Case :

SC-70, SOT-323

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

30mA

Configuration :

Single

Operating Temperature :

-40°C~150°C TJ

Highest Frequency Band :

L B

Voltage - Collector Emitter Breakdown (Max) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 8V

RoHS Status :

ROHS3 Compliant

Published :

2011

Terminal Position :

Dual

Additional Feature :

LOW NOISE

Frequency - Transition :

10GHz

Pin Count :

3

Mounting Type :

Surface Mount

Number of Elements :

1

Power - Max :

450mW

Terminal Form :

Gull wing

Base Part Number :

BFU520

Polarity/Channel Type :

NPN

Reference Standard :

AEC-Q101; IEC-60134

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Noise Figure (dB Typ @ f) :

1dB @ 1.8GHz

Surface Mount :

yes

Transistor Application :

AMPLIFIER

Transition Frequency :

10000MHz