BFS17WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

JESD-609 Code :

e3

Width :

1.25mm

Published :

2011

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Elements :

1

Power Dissipation :

280mW

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Collector-Base Capacitance-Max :

0.8pF

Collector Emitter Voltage (VCEO) :

15V

Mount :

Surface Mount

Max Collector Current :

25mA

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Frequency :

2.5GHz

Transition Frequency :

2500MHz

Max Power Dissipation :

280mW

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

2.5V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Configuration :

Single

Height :

800μm

Number of Terminations :

3

Base Part Number :

BFS17

Length :

2mm

Terminal Finish :

Matte Tin (Sn)

Frequency - Transition :

1.4GHz

Package / Case :

SC-70, SOT-323

Max Breakdown Voltage :

15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

25V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 2mA 1V

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

15V

Factory Lead Time :

4 Weeks

Noise Figure (dB Typ @ f) :

3.5dB ~ 5dB @ 800MHz

Collector Emitter Saturation Voltage :

400mV

Terminal Position :

Dual

Number of Pins :

3