BFS17HTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - RF

Transition Frequency :

1300MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

25mA

Frequency :

1.3GHz

Transistor Type :

NPN

Max Breakdown Voltage :

15V

Weight :

7.994566mg

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

15V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Width :

1.4mm

Continuous Collector Current :

25mA

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 2mA 1V

Transistor Application :

AMPLIFIER

Package / Case :

TO-236-3, SC-59, SOT-23-3

hFE Min :

70

Base Part Number :

BFS17

Noise Figure (dB Typ @ f) :

4.5dB @ 500MHz

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

Terminal Form :

Gull wing

Height :

1mm

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gain Bandwidth Product :

1.3 GHz

Collector Base Voltage (VCBO) :

25V

Voltage - Rated DC :

15V

Mounting Type :

Surface Mount

Published :

1996

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Max Power Dissipation :

330mW

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

2.5V

Element Configuration :

Single

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Current Rating :

25mA

Mount :

Surface Mount

Power Dissipation :

330mW

Length :

3.05mm

Collector Emitter Breakdown Voltage :

15V