BFS17A,215
- Mfr.Part #
- BFS17A,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- RF TRANS NPN 15V 2.8GHZ TO236AB
- Stock
- 55
- In Stock :
- 55
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.21.00.75
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-30 Code :
- R-PDSO-G3
- Current - Collector (Ic) (Max) :
- 25mA
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 2mA 1V
- Power Dissipation-Max (Abs) :
- 0.3W
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 2800MHz
- JESD-609 Code :
- e3
- Base Part Number :
- BFS17
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Power - Max :
- 300mW
- Published :
- 1996
- Frequency - Transition :
- 2.8GHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY B
- ECCN Code :
- EAR99
- Noise Figure (dB Typ @ f) :
- 2.5dB @ 800MHz
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- yes
- Transistor Application :
- AMPLIFIER
- Power Dissipation Ambient-Max :
- 0.3W
- Reference Standard :
- CECC
- Pin Count :
- 3
- Datasheets
- BFS17A,215

BFS17A,215 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP USA Inc. stock available at
Features:
- Maximum Collector-Emitter Voltage of 15V
- Maximum Collector Current of 200mA
- Maximum Frequency of 2.8GHz
- Low Noise Figure
- High Gain
- Low Capacitance
- Low Power Consumption
- High Reliability
Applications: The BFS17A,215 is suitable for use in a variety of RF applications, such as amplifiers, oscillators, mixers, and switches. It is also suitable for use in high-frequency, low-noise, and low-power applications.
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