BFS17A,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation Ambient-Max :

0.3W

Frequency - Transition :

2.8GHz

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

0.3W

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 2mA 1V

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Terminal Position :

Dual

Published :

1996

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.21.00.75

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Current - Collector (Ic) (Max) :

25mA

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Voltage - Collector Emitter Breakdown (Max) :

15V

Power - Max :

300mW

Number of Elements :

1

Configuration :

Single

Qualification Status :

Not Qualified

Number of Terminations :

3

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Noise Figure (dB Typ @ f) :

2.5dB @ 800MHz

Transition Frequency :

2800MHz

Base Part Number :

BFS17

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Pin Count :

3

JESD-30 Code :

R-PDSO-G3

Reference Standard :

CECC

Transistor Type :

NPN

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount