BFS17A,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Voltage - Collector Emitter Breakdown (Max) :

15V

Noise Figure (dB Typ @ f) :

2.5dB @ 800MHz

Terminal Finish :

Tin (Sn)

Published :

1996

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Power Dissipation-Max (Abs) :

0.3W

Time@Peak Reflow Temperature-Max (s) :

40

Frequency - Transition :

2.8GHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation Ambient-Max :

0.3W

Surface Mount :

yes

Current - Collector (Ic) (Max) :

25mA

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PDSO-G3

Reference Standard :

CECC

HTS Code :

8541.21.00.75

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Pin Count :

3

Configuration :

Single

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

JESD-609 Code :

e3

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 2mA 1V

Transistor Type :

NPN

Transition Frequency :

2800MHz

Power - Max :

300mW

Transistor Element Material :

SILICON

Number of Terminations :

3

Terminal Position :

Dual

Base Part Number :

BFS17

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified