BFP740FESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency - Transition :

47GHz

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101

Highest Frequency Band :

X B

Number of Pins :

4

JESD-609 Code :

e3

Noise Figure (dB Typ @ f) :

0.5dB ~ 1.45dB @ 150MHz ~ 10GHz

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON GERMANIUM CARBON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

160mW

Collector Emitter Breakdown Voltage :

4.7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Terminal Position :

Dual

Package / Case :

4-SMD, Flat Leads

Max Power Dissipation :

160mW

Base Part Number :

BFP740

Packaging :

Tape and Reel (TR)

Transition Frequency :

47000MHz

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 25mA 3V

Number of Elements :

1

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Collector Current :

45mA

Contact Plating :

Tin

Halogen Free :

Halogen Free

Gain :

9dB ~ 31dB

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Configuration :

Single

Factory Lead Time :

8 Weeks

Number of Terminations :

4

Collector Emitter Voltage (VCEO) :

4.2V

Collector Base Voltage (VCBO) :

4.9V

ECCN Code :

EAR99