BFP740E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Power Gain :

31.5(dB)

Transistor Type :

NPN

Collector-Emitter Voltage :

4 V

Rad Hardened :

No

Type :

NPN

Mounting Type :

Surface Mount

Collector-Base Voltage :

13(V)

Collector Current (DC) (Max) :

0.03 A

Continuous Collector Current :

45

Frequency :

42000 MHz

Operating Temperature Classification :

Military

Gain :

27dB

Transition Frequency :

44

Mounting :

Surface Mount

Current - Collector (Ic) (Max) :

30mA

Configuration :

Single Dual Emitter

Product Status :

Active

Collector Current (DC) :

0.045(A)

Reach Compliance Code :

Compliant

Voltage - Collector Emitter Breakdown (Max) :

4.7V

Number of Elements :

1

Category :

Bipolar RF

Packaging :

Tape and Reel

Pin Count :

3 +Tab

Operating Temp Range :

-65C to 150C

Package Type :

SOT-343

DC Current Gain :

160

Package :

Bulk

Series :

-

Noise Figure (dB Typ @ f) :

0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz

Package / Case :

SC-82A, SOT-343

Power Dissipation :

160

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 25mA, 3V

Operating Temperature :

150°C (TJ)

Manufacturer :

Infineon Technologies AG

Power - Max :

160mW

Supplier Device Package :

PG-SOT343-4

Transistor Polarity :

NPN

Frequency - Transition :

42GHz

Emitter-Base Voltage :

1.2(V)