BFP720FESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Voltage (VCEO) :

4.2V

Halogen Free :

Halogen Free

Current - Collector (Ic) (Max) :

30mA

JESD-609 Code :

e3

Transistor Type :

NPN

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Transistor Element Material :

SILICON GERMANIUM CARBON

Frequency :

45GHz

Max Collector Current :

30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 15mA 3V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Power Dissipation :

100mW

Gain :

10dB ~ 29dB

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Base Part Number :

BFP720

Terminal Position :

Dual

Contact Plating :

Tin

Number of Elements :

1

Published :

2010

Collector Base Voltage (VCBO) :

4.9V

Collector Emitter Breakdown Voltage :

4.7V

Package / Case :

4-SMD, Flat Leads

Max Power Dissipation :

100mW

Noise Figure (dB Typ @ f) :

0.5dB ~ 1.3dB @ 150MHz ~ 10GHz

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Transition Frequency :

45000MHz

Number of Pins :

4

Mount :

Surface Mount