BFP520FH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 20mA 2V

Factory Lead Time :

8 Weeks

Max Breakdown Voltage :

3.5V

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Collector Current :

40mA

Collector Emitter Voltage (VCEO) :

2.5V

Package / Case :

4-SMD, Flat Leads

Frequency :

45GHz

Noise Figure (dB Typ @ f) :

0.95dB @ 1.8GHz

Transition Frequency :

45000MHz

Base Part Number :

BFP520

Terminal Position :

Dual

Gain :

22.5dB

Collector Emitter Breakdown Voltage :

3.5V

Number of Pins :

4

Max Power Dissipation :

100mW

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Number of Terminations :

4

Emitter Base Voltage (VEBO) :

1V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Pin Count :

4

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Base Voltage (VCBO) :

10V

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Power Dissipation :

100mW

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

ECCN Code :

EAR99

Mount :

Surface Mount