BFP520H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Length :

2mm

Power Dissipation :

100mW

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Noise Figure (dB Typ @ f) :

0.95dB @ 1.8GHz

Max Collector Current :

40mA

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Pbfree Code :

yes

Radiation Hardening :

No

Gain :

22.5dB

Emitter Base Voltage (VEBO) :

1V

Number of Elements :

1

Transistor Type :

NPN

Halogen Free :

Halogen Free

Base Part Number :

BFP520

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Polarity/Channel Type :

NPN

Width :

1.25mm

Collector Base Voltage (VCBO) :

10V

Number of Pins :

4

Package / Case :

SC-82A, SOT-343

Collector Emitter Breakdown Voltage :

3.5V

Number of Terminations :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 20mA 2V

Pin Count :

4

Max Breakdown Voltage :

3.5V

Height :

900μm

Operating Temperature :

150°C TJ

Contact Plating :

Tin

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

2.5V

Transistor Application :

AMPLIFIER

Max Power Dissipation :

100mW

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Published :

2005

Transition Frequency :

45000MHz

Frequency :

45GHz

Terminal Position :

Dual