BFP193WH6327XTSA1
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- Mfr.Part #
- BFP193WH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-82A, SOT-343
- Datasheet
- Download
- Description
- RF TRANS NPN 12V 8GHZ SOT343-4
- Stock
- 16,798
- In Stock ：
- 16,798
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PDSO-G3
- Test Frequency :
- 900MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 30mA 8V
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Noise Figure (dB Typ @ f) :
- 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Polarity/Channel Type :
- NPN
- Package / Case :
- SC-82A, SOT-343
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Radiation Hardening :
- No
- REACH SVHC :
- Unknown
- Transition Frequency :
- 8000MHz
- Power Dissipation :
- 580mW
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Base Part Number :
- BFP193
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 50
- Termination :
- SMD/SMT
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Configuration :
- Single
- Frequency :
- 8GHz
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 80mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 12V
- Operating Temperature :
- 150°C TJ
- Gain :
- 13.5dB ~ 20.5dB
- Max Collector Current :
- 50mA
- Emitter Base Voltage (VEBO) :
- 2V
- Max Breakdown Voltage :
- 12V
- Published :
- 2014
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 20V
- Max Power Dissipation :
- 580mW
- Collector Emitter Breakdown Voltage :
- 12V
- Number of Pins :
- 4
- Datasheets
- BFP193WH6327XTSA1
BFP193WH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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