BFP193E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Voltage (VCEO) :

12V

Transistor Element Material :

SILICON

Max Power Dissipation :

580mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Lead Free :

Lead Free

Voltage - Rated DC :

12V

Frequency :

8GHz

Max Collector Current :

80mA

Transition Frequency :

8000MHz

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Qualification Status :

Not Qualified

Width :

1.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

2V

Number of Pins :

4

Pbfree Code :

yes

Gain :

12dB ~ 18dB

Mount :

Surface Mount

Length :

2.9mm

Current Rating :

80mA

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Height :

1mm

Power Dissipation :

580mW

Terminal Position :

Dual

JESD-609 Code :

e3

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

80mA

Package / Case :

TO-253-4, TO-253AA

ECCN Code :

EAR99

Collector-Base Capacitance-Max :

0.9pF

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Collector Base Voltage (VCBO) :

20V

Mounting Type :

Surface Mount

Published :

2013

Halogen Free :

Not Halogen Free

Number of Terminations :

4

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Base Part Number :

BFP193

Transistor Application :

AMPLIFIER

Configuration :

Single

RoHS Status :

ROHS3 Compliant