BFG135AE6327XT

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 100mA 8V

Min Operating Temperature :

-65°C

Transistor Type :

NPN

Max Power Dissipation :

1W

Polarity :

NPN

Package / Case :

TO-261-4, TO-261AA

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

15V

Current - Collector (Ic) (Max) :

150mA

Gain :

9dB ~ 14dB

Emitter Base Voltage (VEBO) :

2V

Collector Emitter Voltage (VCEO) :

15V

Frequency :

6GHz

Max Operating Temperature :

150°C

Noise Figure (dB Typ @ f) :

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

Mount :

Surface Mount

Power Dissipation :

1W

Collector Base Voltage (VCBO) :

25V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Max Collector Current :

150mA

Power - Max :

1W

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

6GHz

Number of Pins :

4

Base Part Number :

BFG135

Collector Emitter Breakdown Voltage :

15V

Supplier Device Package :

PG-SOT223-4