BFG135,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

HTS Code :

8541.21.00.75

Peak Reflow Temperature (Cel) :

260

Power - Max :

1W

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

1W

Power Dissipation Ambient-Max :

1W

Terminal Finish :

Tin (Sn)

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Number of Terminations :

4

Transistor Application :

AMPLIFIER

Configuration :

Single

Frequency - Transition :

7GHz

Published :

1995

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V

Transistor Element Material :

SILICON

Transition Frequency :

7000MHz

Number of Elements :

1

JESD-30 Code :

R-PDSO-G4

Package / Case :

TO-261-4, TO-261AA

Additional Feature :

BUILT-IN EMITTER BALLASTING RESISTORS

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

150mA

RoHS Status :

ROHS3 Compliant

Operating Temperature :

175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Base Part Number :

BFG135

Pin Count :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 100mA 10V

Surface Mount :

yes

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40