BFG135,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Pin Count :

4

Configuration :

Single

Additional Feature :

BUILT-IN EMITTER BALLASTING RESISTORS

JESD-30 Code :

R-PDSO-G4

Power Dissipation-Max (Abs) :

1W

Surface Mount :

yes

Mounting Type :

Surface Mount

Transistor Type :

NPN

Transistor Element Material :

SILICON

Frequency - Transition :

7GHz

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Power - Max :

1W

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER

Published :

1995

ECCN Code :

EAR99

Terminal Position :

Dual

Operating Temperature :

175°C TJ

Transition Frequency :

7000MHz

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

Package / Case :

TO-261-4, TO-261AA

Current - Collector (Ic) (Max) :

150mA

Case Connection :

COLLECTOR

Power Dissipation Ambient-Max :

1W

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 100mA 10V

Number of Terminations :

4

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Voltage - Collector Emitter Breakdown (Max) :

15V

Terminal Finish :

Tin (Sn)

Base Part Number :

BFG135

HTS Code :

8541.21.00.75