BFG135,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 100mA 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Current - Collector (Ic) (Max) :

150mA

Transistor Type :

NPN

Qualification Status :

Not Qualified

Power Dissipation Ambient-Max :

1W

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Frequency - Transition :

7GHz

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Collector Emitter Breakdown (Max) :

15V

Terminal Position :

Dual

Base Part Number :

BFG135

Transition Frequency :

7000MHz

JESD-30 Code :

R-PDSO-G4

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Operating Temperature :

175°C TJ

Number of Terminations :

4

Configuration :

Single

HTS Code :

8541.21.00.75

Package / Case :

TO-261-4, TO-261AA

JESD-609 Code :

e3

Power - Max :

1W

Polarity/Channel Type :

NPN

Pin Count :

4

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Published :

1995

Case Connection :

COLLECTOR

Power Dissipation-Max (Abs) :

1W

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT-IN EMITTER BALLASTING RESISTORS