BFG10W/X,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Terminal Position :

Dual

Frequency - Transition :

1.9GHz

Case Connection :

COLLECTOR

Additional Feature :

High Reliability

Power Dissipation-Max (Abs) :

0.4W

Polarity/Channel Type :

NPN

Package / Case :

SOT-343 Reverse Pinning

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 50mA 5V

Operating Temperature :

175°C TJ

Voltage - Collector Emitter Breakdown (Max) :

10V

Number of Elements :

1

HTS Code :

8541.21.00.75

Number of Terminations :

4

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G4

Current - Collector (Ic) (Max) :

250mA

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Published :

1995

Pin Count :

4

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Surface Mount :

yes

Power - Max :

400mW

Reach Compliance Code :

Unknown

Configuration :

Single

Collector-Base Capacitance-Max :

3pF

JESD-609 Code :

e3

Base Part Number :

BFG10

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)