BFG 235 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Terminations :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 200mA 8V

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

15V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Noise Figure (dB Typ @ f) :

1.7dB @ 900MHz

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Published :

2007

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT IN EMITTER BALLASTING RESISTOR

Power Dissipation-Max (Abs) :

2W

Frequency - Transition :

5.5GHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G4

Terminal Position :

Dual

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

Case Connection :

COLLECTOR

Collector-Base Capacitance-Max :

3.6pF

Number of Elements :

1

Gain :

12.5dB

Current - Collector (Ic) (Max) :

300mA

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

Operating Temperature :

150°C TJ

Surface Mount :

yes

Transistor Application :

AMPLIFIER

Power - Max :

2W

Package / Case :

TO-261-4, TO-261AA

Transition Frequency :

5500MHz

Highest Frequency Band :

L B