BFG 235 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector-Base Capacitance-Max :

3.6pF

Highest Frequency Band :

L B

Published :

2007

Case Connection :

COLLECTOR

Power - Max :

2W

Additional Feature :

BUILT IN EMITTER BALLASTING RESISTOR

Current - Collector (Ic) (Max) :

300mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Package / Case :

TO-261-4, TO-261AA

Qualification Status :

Not Qualified

Frequency - Transition :

5.5GHz

Transistor Type :

NPN

ECCN Code :

EAR99

Number of Terminations :

4

Surface Mount :

yes

Transistor Element Material :

SILICON

Noise Figure (dB Typ @ f) :

1.7dB @ 900MHz

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Transition Frequency :

5500MHz

JESD-30 Code :

R-PDSO-G4

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 200mA 8V

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Gain :

12.5dB

Power Dissipation-Max (Abs) :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual