BFG 196 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Peak Reflow Temperature (Cel) :

235

Terminal Position :

Dual

Collector-Base Capacitance-Max :

1.4pF

Power - Max :

800mW

ECCN Code :

EAR99

Configuration :

Single

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Transition Frequency :

7500MHz

Gain :

9dB ~ 14.5dB

Surface Mount :

yes

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Package / Case :

TO-261-4, TO-261AA

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-30 Code :

R-PDSO-G4

Frequency - Transition :

7.5GHz

Published :

2007

Power Dissipation-Max (Abs) :

0.8W

Number of Terminations :

4

Current - Collector (Ic) (Max) :

150mA

Highest Frequency Band :

L B

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 8V

Case Connection :

COLLECTOR

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

12V

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Transistor Type :

NPN

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

NPN