BFG 19S E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Package / Case :

TO-261-4, TO-261AA

Terminal Position :

Dual

Transition Frequency :

5500MHz

Configuration :

Single

Surface Mount :

yes

Case Connection :

COLLECTOR

Polarity/Channel Type :

NPN

Noise Figure (dB Typ @ f) :

2dB ~ 3dB @ 900MHz ~ 1.8GHz

Transistor Application :

AMPLIFIER

Published :

2008

RoHS Status :

Non-RoHS Compliant

Gain :

14dB ~ 8.5dB

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

15V

Power Dissipation-Max (Abs) :

1W

Frequency - Transition :

5.5GHz

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA 8V

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PDSO-G4

Current - Collector (Ic) (Max) :

210mA

Collector-Base Capacitance-Max :

1.4pF

ECCN Code :

EAR99

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

1W

Terminal Form :

Gull wing

Qualification Status :

Not Qualified