BFG 19S E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Power Dissipation-Max (Abs) :

1W

Transistor Type :

NPN

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Surface Mount :

yes

Published :

2008

Packaging :

Tape and Reel (TR)

Package / Case :

TO-261-4, TO-261AA

Operating Temperature :

150°C TJ

Power - Max :

1W

Number of Terminations :

4

Terminal Position :

Dual

Collector-Base Capacitance-Max :

1.4pF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Configuration :

Single

Qualification Status :

Not Qualified

Noise Figure (dB Typ @ f) :

2dB ~ 3dB @ 900MHz ~ 1.8GHz

Voltage - Collector Emitter Breakdown (Max) :

15V

JESD-30 Code :

R-PDSO-G4

Frequency - Transition :

5.5GHz

Polarity/Channel Type :

NPN

Current - Collector (Ic) (Max) :

210mA

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Gain :

14dB ~ 8.5dB

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA 8V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transition Frequency :

5500MHz