BFG 19S E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Frequency - Transition :

5.5GHz

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PDSO-G4

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Power - Max :

1W

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA 8V

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Published :

2008

Collector-Base Capacitance-Max :

1.4pF

Noise Figure (dB Typ @ f) :

2dB ~ 3dB @ 900MHz ~ 1.8GHz

Terminal Position :

Dual

Case Connection :

COLLECTOR

Gain :

14dB ~ 8.5dB

Qualification Status :

Not Qualified

Transition Frequency :

5500MHz

Voltage - Collector Emitter Breakdown (Max) :

15V

Power Dissipation-Max (Abs) :

1W

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

210mA

Number of Terminations :

4

Polarity/Channel Type :

NPN

Package / Case :

TO-261-4, TO-261AA

Terminal Form :

Gull wing