BF776H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Pbfree Code :

yes

Collector-Base Capacitance-Max :

0.2pF

Mount :

Surface Mount

Polarity/Channel Type :

NPN

Published :

2010

Collector Emitter Voltage (VCEO) :

4V

Emitter Base Voltage (VEBO) :

1.2V

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 30mA 3V

Number of Elements :

1

Terminal Position :

Dual

Frequency :

40GHz

Max Power Dissipation :

200mW

Transistor Type :

NPN

Case Connection :

Emitter

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Power Dissipation :

200mW

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Collector Emitter Breakdown Voltage :

4.7V

JESD-30 Code :

R-PDSO-G4

Gain :

24dB

Base Part Number :

BF776

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Max Collector Current :

50mA

Max Breakdown Voltage :

4.7V

Transition Frequency :

46000MHz

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Number of Terminations :

4

Frequency - Transition :

46GHz

Package / Case :

SC-82A, SOT-343

Factory Lead Time :

4 Weeks

Operating Temperature :

150°C TJ

Collector Base Voltage (VCBO) :

13V

Transistor Application :

AMPLIFIER