BF776H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Max Collector Current :

50mA

Power Dissipation :

200mW

Case Connection :

Emitter

Frequency :

40GHz

Configuration :

Single

Collector-Base Capacitance-Max :

0.2pF

Transition Frequency :

46000MHz

Max Power Dissipation :

200mW

Package / Case :

SC-82A, SOT-343

Collector Emitter Breakdown Voltage :

4.7V

Gain :

24dB

Factory Lead Time :

4 Weeks

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Frequency - Transition :

46GHz

Transistor Type :

NPN

Mounting Type :

Surface Mount

Number of Elements :

1

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Published :

2010

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

1.2V

Base Part Number :

BF776

JESD-30 Code :

R-PDSO-G4

Max Breakdown Voltage :

4.7V

Transistor Application :

AMPLIFIER

Collector Emitter Voltage (VCEO) :

4V

Mount :

Surface Mount

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 30mA 3V

Terminal Position :

Dual

Number of Terminations :

4

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

13V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)