BF771E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Configuration :

Single

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current Rating :

80mA

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Gain :

10dB ~ 15dB

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Factory Lead Time :

4 Weeks

Pbfree Code :

yes

Max Power Dissipation :

580mW

Polarity/Channel Type :

NPN

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

12V

Voltage - Rated DC :

12V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Max Collector Current :

80mA

Emitter Base Voltage (VEBO) :

2V

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

12V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Power Dissipation :

580mW

Collector Base Voltage (VCBO) :

20V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Mount :

Surface Mount

Frequency :

8GHz

Number of Pins :

3

Qualification Status :

Not Qualified

Transition Frequency :

8000MHz

Published :

2007