BDX53CG
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- Mfr.Part #
- BDX53CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO220
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Width :
- 4.82mm
- Max Power Dissipation :
- 65W
- Power Dissipation :
- 40W
- Continuous Collector Current :
- 4A
- Number of Pins :
- 3
- Height :
- 9.28mm
- Length :
- 10.28mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Radiation Hardening :
- No
- Factory Lead Time :
- 7 Weeks
- JESD-609 Code :
- e3
- Transistor Type :
- NPN - Darlington
- REACH SVHC :
- No SVHC
- hFE Min :
- 750
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Element Configuration :
- Single
- Max Collector Current :
- 8A
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Polarity :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-220-3
- Current Rating :
- 8A
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BDX53
- Collector Emitter Saturation Voltage :
- 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transition Frequency :
- 20MHz
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Collector Base Voltage (VCBO) :
- 100V
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 500μA
- Surface Mount :
- No
- Packaging :
- Tube
- Published :
- 1999
- Voltage - Rated DC :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- BDX53CG
BDX53CG Documents
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX53CG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 12mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 20MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
BDX53CG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 20MHz
BDX53CG Applications
There are a lot of ON Semiconductor
BDX53CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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