BDX53CG
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- Mfr.Part #
- BDX53CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO220
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 2V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Polarity :
- NPN
- Pbfree Code :
- yes
- Current Rating :
- 8A
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 750
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 100V
- Published :
- 1999
- Width :
- 4.82mm
- Continuous Collector Current :
- 4A
- Packaging :
- Tube
- Factory Lead Time :
- 7 Weeks
- Max Power Dissipation :
- 65W
- Max Collector Current :
- 8A
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- Length :
- 10.28mm
- Transition Frequency :
- 20MHz
- Pin Count :
- 3
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BDX53
- Operating Temperature :
- -65°C~150°C TJ
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 9.28mm
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- REACH SVHC :
- No SVHC
- Weight :
- 4.535924g
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 100V
- Transistor Application :
- AMPLIFIER
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Power Dissipation :
- 40W
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 500μA
- Transistor Type :
- NPN - Darlington
- Collector Emitter Breakdown Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Datasheets
- BDX53CG
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX53CG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 12mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 20MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
BDX53CG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 20MHz
BDX53CG Applications
There are a lot of ON Semiconductor
BDX53CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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