BDX53CG
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- Mfr.Part #
- BDX53CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO220
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 40W
- ECCN Code :
- EAR99
- Published :
- 1999
- Polarity :
- NPN
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- Voltage - Rated DC :
- 100V
- Collector Emitter Saturation Voltage :
- 2V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 100V
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 500μA
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Width :
- 4.82mm
- Collector Base Voltage (VCBO) :
- 100V
- Factory Lead Time :
- 7 Weeks
- Weight :
- 4.535924g
- Current Rating :
- 8A
- Base Part Number :
- BDX53
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 65W
- Pbfree Code :
- yes
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Number of Elements :
- 1
- Length :
- 10.28mm
- Continuous Collector Current :
- 4A
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 20MHz
- Surface Mount :
- No
- Height :
- 9.28mm
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Type :
- NPN - Darlington
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- hFE Min :
- 750
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- Max Collector Current :
- 8A
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Datasheets
- BDX53CG
BDX53CG Documents
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX53CG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 12mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 20MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
BDX53CG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 20MHz
BDX53CG Applications
There are a lot of ON Semiconductor
BDX53CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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