BDX53CG
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- Mfr.Part #
- BDX53CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO220
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Transistor Type :
- NPN - Darlington
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Length :
- 10.28mm
- hFE Min :
- 750
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 7 Weeks
- Max Collector Current :
- 8A
- Package / Case :
- TO-220-3
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 65W
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Continuous Collector Current :
- 4A
- Base Part Number :
- BDX53
- Collector Emitter Saturation Voltage :
- 2V
- Number of Pins :
- 3
- Pin Count :
- 3
- Power Dissipation :
- 40W
- JESD-609 Code :
- e3
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Published :
- 1999
- JEDEC-95 Code :
- TO-220AB
- Width :
- 4.82mm
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 20MHz
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Number of Terminations :
- 3
- Polarity :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Weight :
- 4.535924g
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Current - Collector Cutoff (Max) :
- 500μA
- Terminal Finish :
- Tin (Sn)
- Height :
- 9.28mm
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 100V
- Packaging :
- Tube
- Current Rating :
- 8A
- Collector Emitter Voltage (VCEO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BDX53CG
BDX53CG Documents
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX53CG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 12mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 20MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
BDX53CG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 20MHz
BDX53CG Applications
There are a lot of ON Semiconductor
BDX53CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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