BDX53CG
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- Mfr.Part #
- BDX53CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO220
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 65W
- Max Collector Current :
- 8A
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Height :
- 9.28mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Pbfree Code :
- yes
- Continuous Collector Current :
- 4A
- Power Dissipation :
- 40W
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 1999
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 500μA
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN - Darlington
- Factory Lead Time :
- 7 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Transition Frequency :
- 20MHz
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Case Connection :
- COLLECTOR
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Polarity :
- NPN
- Surface Mount :
- No
- Width :
- 4.82mm
- JEDEC-95 Code :
- TO-220AB
- Weight :
- 4.535924g
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 100V
- Length :
- 10.28mm
- Packaging :
- Tube
- Current Rating :
- 8A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Saturation Voltage :
- 2V
- hFE Min :
- 750
- Base Part Number :
- BDX53
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Datasheets
- BDX53CG
BDX53CG Documents
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX53CG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 12mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 20MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
BDX53CG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 20MHz
BDX53CG Applications
There are a lot of ON Semiconductor
BDX53CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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