BDX53CG
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- Mfr.Part #
- BDX53CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO220
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Weight :
- 4.535924g
- Number of Pins :
- 3
- Voltage - Rated DC :
- 100V
- Base Part Number :
- BDX53
- Polarity :
- NPN
- Published :
- 1999
- Height :
- 9.28mm
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Max Collector Current :
- 8A
- Length :
- 10.28mm
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Emitter Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Packaging :
- Tube
- Surface Mount :
- No
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Power Dissipation :
- 40W
- Width :
- 4.82mm
- Collector Base Voltage (VCBO) :
- 100V
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-220-3
- Current Rating :
- 8A
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 500μA
- JEDEC-95 Code :
- TO-220AB
- Max Power Dissipation :
- 65W
- Radiation Hardening :
- No
- Transistor Type :
- NPN - Darlington
- hFE Min :
- 750
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Pbfree Code :
- yes
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 2V
- Factory Lead Time :
- 7 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 20MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Terminal Finish :
- Tin (Sn)
- Continuous Collector Current :
- 4A
- Datasheets
- BDX53CG
BDX53CG Documents
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX53CG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 12mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 20MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
BDX53CG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 20MHz
BDX53CG Applications
There are a lot of ON Semiconductor
BDX53CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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