BDX53CG

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Mfr.Part #
BDX53CG
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 8A TO220
Stock
10
In Stock :
10

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Case Connection :
COLLECTOR
Collector Emitter Breakdown Voltage :
100V
Pin Count :
3
Width :
4.82mm
Max Power Dissipation :
65W
Power Dissipation :
40W
Continuous Collector Current :
4A
Number of Pins :
3
Height :
9.28mm
Length :
10.28mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Radiation Hardening :
No
Factory Lead Time :
7 Weeks
JESD-609 Code :
e3
Transistor Type :
NPN - Darlington
REACH SVHC :
No SVHC
hFE Min :
750
Lead Free :
Lead Free
JEDEC-95 Code :
TO-220AB
Operating Temperature :
-65°C~150°C TJ
Transistor Element Material :
SILICON
Number of Elements :
1
Element Configuration :
Single
Max Collector Current :
8A
Mounting Type :
Through Hole
Pbfree Code :
yes
Transistor Application :
AMPLIFIER
Polarity :
NPN
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
TO-220-3
Current Rating :
8A
Peak Reflow Temperature (Cel) :
260
Base Part Number :
BDX53
Collector Emitter Saturation Voltage :
2V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Weight :
4.535924g
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Transition Frequency :
20MHz
Vce Saturation (Max) @ Ib, Ic :
2V @ 12mA, 3A
Collector Base Voltage (VCBO) :
100V
Number of Terminations :
3
Current - Collector Cutoff (Max) :
500μA
Surface Mount :
No
Packaging :
Tube
Published :
1999
Voltage - Rated DC :
100V
Emitter Base Voltage (VEBO) :
5V
Terminal Finish :
Tin (Sn)
Collector Emitter Voltage (VCEO) :
100V
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX53CG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Base Part Number:BDX53, Number of Terminations:3, BDX53CG pinout, BDX53CG datasheet PDF, BDX53CG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX53CG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX53CG


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX53CG Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 12mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 20MHz is present in the part.Collector current can be as low as 8A volts at its maximum.

BDX53CG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 20MHz


BDX53CG Applications


There are a lot of ON Semiconductor
BDX53CG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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