BDX53CG

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Mfr.Part #
BDX53CG
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 8A TO220
Stock
10
In Stock :
10

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
Transistor Type :
NPN - Darlington
Number of Elements :
1
ECCN Code :
EAR99
Length :
10.28mm
hFE Min :
750
Pbfree Code :
yes
Collector Emitter Breakdown Voltage :
100V
Factory Lead Time :
7 Weeks
Max Collector Current :
8A
Package / Case :
TO-220-3
Peak Reflow Temperature (Cel) :
260
Max Power Dissipation :
65W
Vce Saturation (Max) @ Ib, Ic :
2V @ 12mA, 3A
Continuous Collector Current :
4A
Base Part Number :
BDX53
Collector Emitter Saturation Voltage :
2V
Number of Pins :
3
Pin Count :
3
Power Dissipation :
40W
JESD-609 Code :
e3
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Published :
1999
JEDEC-95 Code :
TO-220AB
Width :
4.82mm
REACH SVHC :
No SVHC
Transition Frequency :
20MHz
Radiation Hardening :
No
Operating Temperature :
-65°C~150°C TJ
Number of Terminations :
3
Polarity :
NPN
Collector Base Voltage (VCBO) :
100V
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
COLLECTOR
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Weight :
4.535924g
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Current - Collector Cutoff (Max) :
500μA
Terminal Finish :
Tin (Sn)
Height :
9.28mm
Transistor Application :
AMPLIFIER
Lead Free :
Lead Free
Voltage - Rated DC :
100V
Packaging :
Tube
Current Rating :
8A
Collector Emitter Voltage (VCEO) :
100V
Emitter Base Voltage (VEBO) :
5V
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX53CG from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Base Part Number:BDX53, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, BDX53CG pinout, BDX53CG datasheet PDF, BDX53CG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX53CG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX53CG


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX53CG Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 12mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 20MHz is present in the part.Collector current can be as low as 8A volts at its maximum.

BDX53CG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 20MHz


BDX53CG Applications


There are a lot of ON Semiconductor
BDX53CG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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