BDX53C-S

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Mfr.Part #
BDX53C-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 8A TO220
Stock
5,979
In Stock :
5,979

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 12mA, 3A
Min Operating Temperature :
-65°C
Max Collector Current :
8A
Polarity :
NPN
Element Configuration :
Single
Published :
1993
Current - Collector Cutoff (Max) :
500μA
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Current - Collector (Ic) (Max) :
8A
hFE Min :
750
Number of Elements :
1
Power - Max :
2W
Voltage - Collector Emitter Breakdown (Max) :
100V
Max Operating Temperature :
150°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
100V
Packaging :
Tube
Transistor Type :
NPN - Darlington
Operating Temperature :
-65°C~150°C TJ
Collector Emitter Breakdown Voltage :
100V
Max Power Dissipation :
2W
Mounting Type :
Through Hole
Collector Emitter Saturation Voltage :
2V
Supplier Device Package :
TO-220
Base Part Number :
BDX53
Emitter Base Voltage (VEBO) :
5V
Package / Case :
TO-220-3
Mount :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Collector Base Voltage (VCBO) :
100V
Datasheets
BDX53C-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDX53C-S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Base Part Number:BDX53, Package / Case:TO-220-3, BDX53C-S pinout, BDX53C-S datasheet PDF, BDX53C-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDX53C-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDX53C-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements TO-220-3 Tube Through Hole

BDX53C-S Overview


In this device, the DC current gain is 750 @ 3A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 12mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Product comes in the supplier's device package TO-220.There is a 100V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.

BDX53C-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 12mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of TO-220


BDX53C-S Applications


There are a lot of Bourns Inc.
BDX53C-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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