BDX53B
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- Mfr.Part #
- BDX53B
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220
- Stock
- 36,939
- In Stock ：
- 36,939
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BDX53
- Polarity :
- NPN
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 8A
- Factory Lead Time :
- 8 Weeks
- Height :
- 9.15mm
- Emitter Base Voltage (VEBO) :
- 5V
- Continuous Collector Current :
- 8A
- Collector Emitter Breakdown Voltage :
- 80V
- Transition Frequency :
- 20MHz
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Mounting Type :
- Through Hole
- Power Dissipation :
- 60W
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 80V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- hFE Min :
- 750
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Weight :
- 4.535924g
- Collector Emitter Voltage (VCEO) :
- 80V
- Radiation Hardening :
- No
- Width :
- 4.6mm
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 60W
- Current - Collector Cutoff (Max) :
- 500μA
- Length :
- 10.4mm
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- VCEsat-Max :
- 2 V
- Collector Emitter Saturation Voltage :
- 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Datasheets
- BDX53B
BDX53B Documents
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX53B Overview
DC current gain in this device equals 750 @ 3A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 20MHz.In extreme cases, the collector current can be as low as 8A volts.
BDX53B Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 20MHz
BDX53B Applications
There are a lot of STMicroelectronics
BDX53B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
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| BDX53CTU | onsemi | 3,403 | TRANS NPN DARL 100V 8A TO220-3 |
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