BDX53B

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

8A

Collector Emitter Breakdown Voltage :

80V

Continuous Collector Current :

8A

Power Dissipation :

60W

Mount :

Through Hole

Base Part Number :

BDX53

Operating Temperature :

150°C TJ

Height :

9.15mm

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

80V

Package / Case :

TO-220-3

Collector Emitter Saturation Voltage :

2V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A 3V

Vce Saturation (Max) @ Ib, Ic :

2V @ 12mA, 3A

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

VCEsat-Max :

2 V

Length :

10.4mm

Polarity :

NPN

JESD-609 Code :

e3

Width :

4.6mm

Transistor Element Material :

SILICON

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

hFE Min :

750

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500μA

Number of Elements :

1

REACH SVHC :

No SVHC

Transition Frequency :

20MHz

Mounting Type :

Through Hole

Transistor Type :

NPN - Darlington

Factory Lead Time :

8 Weeks

Packaging :

Tube

Collector Base Voltage (VCBO) :

80V

Contact Plating :

Tin

ECCN Code :

EAR99

Weight :

4.535924g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

60W

Lead Free :

Lead Free