BDX53C

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

10.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A 3V

Number of Pins :

2

Collector Emitter Saturation Voltage :

2V

Base Part Number :

BDX53

Collector Emitter Voltage (VCEO) :

100V

Max Collector Current :

8A

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Voltage - Rated DC :

100V

VCEsat-Max :

2 V

Packaging :

Tube

Radiation Hardening :

No

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

2V @ 12mA, 3A

JESD-30 Code :

R-PSFM-T3

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Weight :

90.718474mg

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Mounting Type :

Through Hole

Continuous Collector Current :

8A

Mount :

Through Hole

Current Rating :

8A

Factory Lead Time :

8 Weeks

Transition Frequency :

20MHz

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Current - Collector Cutoff (Max) :

500μA

JESD-609 Code :

e3

Polarity :

NPN

Collector Emitter Breakdown Voltage :

100V

Power Dissipation :

60W

Number of Terminations :

3

Pin Count :

3

Element Configuration :

Single

Max Power Dissipation :

60W

hFE Min :

750

Operating Temperature :

150°C TJ

Collector Base Voltage (VCBO) :

100V

Transistor Application :

SWITCHING

Width :

4.6mm

Height :

19.68mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)