BDX53BG

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Mfr.Part #
BDX53BG
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 8A TO220
Stock
95
In Stock :
95

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
AMPLIFIER
Base Part Number :
BDX53
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
40
Vce Saturation (Max) @ Ib, Ic :
2V @ 12mA, 3A
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
5V
Max Collector Current :
8A
Operating Temperature :
-65°C~150°C TJ
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
Transistor Type :
NPN - Darlington
Mounting Type :
Through Hole
Factory Lead Time :
2 Weeks
Number of Circuits :
8
Number of Pins :
3
Pbfree Code :
yes
Current - Collector Cutoff (Max) :
500μA
Collector Emitter Saturation Voltage :
2V
Pin Count :
3
hFE Min :
750
Case Connection :
COLLECTOR
Collector Base Voltage (VCBO) :
80V
ECCN Code :
EAR99
Radiation Hardening :
No
Lead Free :
Lead Free
Max Power Dissipation :
65W
Packaging :
Tube
Package / Case :
TO-220-3
Number of Elements :
1
Current Rating :
8A
Collector Emitter Breakdown Voltage :
80V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Voltage - Rated DC :
80V
Transition Frequency :
4MHz
Number of Terminations :
3
Terminal Finish :
Tin (Sn)
Published :
2007
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Collector Emitter Voltage (VCEO) :
80V
Polarity :
NPN
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Element Configuration :
Single
JEDEC-95 Code :
TO-220AB
Datasheets
BDX53BG
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX53BG from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BDX53, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, Number of Terminations:3, BDX53BG pinout, BDX53BG datasheet PDF, BDX53BG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX53BG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX53BG


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX53BG Description


The BDX53BG from ON Semiconductor is a Medium Power NPN Darlington Bipolar Power Transistor with 8 A, 100 V, and 65 W.



BDX53BG Features


  • High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc

  • Collector Emitter Sustaining Voltage @ 100 mAdc

  • VCEO(sus) = 80 Vdc (Min) BDX53B, 54B

  • Low Collector-Emitter Saturation Voltage

  • VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

  • VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors

  • TO-220AB Compact Package

  • Pb-Free Packages are Available



BDX53BG Applications


  • General-purpose and low-speed switching applications


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