BDX53C

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Mfr.Part #
BDX53C
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
BDX53 - NPN DARL 100V 3A
Stock
85
In Stock :
85

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Package / Case :
TO-220-3
Power Dissipation :
60W
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Number of Pins :
2
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
100V
Mount :
Through Hole
REACH SVHC :
No SVHC
Collector Base Voltage (VCBO) :
100V
Max Junction Temperature (Tj) :
150°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Number of Terminations :
3
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Transistor Type :
NPN - Darlington
hFE Min :
750
Contact Plating :
Tin
Element Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Vce Saturation (Max) @ Ib, Ic :
2V @ 12mA, 3A
Max Collector Current :
8A
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Radiation Hardening :
No
Height :
19.68mm
Collector Emitter Saturation Voltage :
2V
Voltage - Rated DC :
100V
Max Power Dissipation :
60W
Pin Count :
3
VCEsat-Max :
2 V
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Width :
4.6mm
Current Rating :
8A
Transition Frequency :
20MHz
Length :
10.4mm
Current - Collector Cutoff (Max) :
500μA
Base Part Number :
BDX53
Number of Elements :
1
Lead Free :
Lead Free
Packaging :
Tube
Collector Emitter Voltage (VCEO) :
100V
Continuous Collector Current :
8A
Polarity :
NPN
Weight :
90.718474mg
Factory Lead Time :
8 Weeks
Datasheets
BDX53C
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX53C from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:2, Operating Temperature:150°C TJ, Number of Terminations:3, Base Part Number:BDX53, BDX53C pinout, BDX53C datasheet PDF, BDX53C amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX53C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX53C


NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX53C Description


The BDX53C is manufactured in planar base island technology with a monolithic Darlington configuration. BDX53C is an NPN transistor from the manufacturer of STMicroelectronics with a voltage of 100V. The operating temperature of BDX53C is 150°C TJ and its maximum power dissipation is 60W. BDX53C has 3 pins and it is available in TO-220-3 packaging way. Collector-Emitter Breakdown Voltage of BDX53C is 100V, Collector-Emitter Saturation Voltage is 2V, and Emitter Base Voltage (VEBO) is 5V.



BDX53C Features


  • Good for linearity

  • High fT frequency

  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode



BDX53C Applications


  • Audio amplifiers

  • Linear and switching industrial equipment


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