BDX53C
- Mfr.Part #
- BDX53C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- BDX53 - NPN DARL 100V 3A
- Stock
- 85
- In Stock :
- 85
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 8A
- Package / Case :
- TO-220-3
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Transition Frequency :
- 20MHz
- Collector Emitter Breakdown Voltage :
- 100V
- JESD-30 Code :
- R-PSFM-T3
- Weight :
- 90.718474mg
- Collector Base Voltage (VCBO) :
- 100V
- Base Part Number :
- BDX53
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- ECCN Code :
- EAR99
- Number of Pins :
- 2
- Max Power Dissipation :
- 60W
- VCEsat-Max :
- 2 V
- Length :
- 10.4mm
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 60W
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Height :
- 19.68mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 8A
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 100V
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2V
- Polarity :
- NPN
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Element Configuration :
- Single
- Current Rating :
- 8A
- Pin Count :
- 3
- Transistor Type :
- NPN - Darlington
- hFE Min :
- 750
- Voltage - Rated DC :
- 100V
- Current - Collector Cutoff (Max) :
- 500μA
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Width :
- 4.6mm
- Datasheets
- BDX53C

NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX53C Description
The BDX53C is manufactured in planar base island technology with a monolithic Darlington configuration. BDX53C is an NPN transistor from the manufacturer of STMicroelectronics with a voltage of 100V. The operating temperature of BDX53C is 150°C TJ and its maximum power dissipation is 60W. BDX53C has 3 pins and it is available in TO-220-3 packaging way. Collector-Emitter Breakdown Voltage of BDX53C is 100V, Collector-Emitter Saturation Voltage is 2V, and Emitter Base Voltage (VEBO) is 5V.
BDX53C Features
-
Good for linearity
-
High fT frequency
-
Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
BDX53C Applications
-
Audio amplifiers
-
Linear and switching industrial equipment
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| BDX53A-S | onsemi | 16,225 | TRANS NPN DARL 60V 8A TO220 |
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| BDX53B | onsemi | 18,216 | TRANS NPN DARL 80V 8A TO220 |
| BDX53B | onsemi | 36,939 | TRANS NPN DARL 80V 8A TO220 |
| BDX53B-S | onsemi | 8,820 | TRANS NPN DARL 80V 8A TO220 |
| BDX53BFP | onsemi | 29 | TRANS NPN DARL 80V 8A TO220FP |
| BDX53BG | onsemi | 95 | TRANS NPN DARL 80V 8A TO220 |
| BDX53BTU | onsemi | 14,109 | TRANS NPN DARL 80V 8A TO220-3 |
| BDX53BTU | onsemi | 11,901 | TRANS NPN DARL 80V 8A TO220-3 |
| BDX53C | onsemi | 85 | TRANS NPN DARL 100V 8A TO220 |
| BDX53C | onsemi | 85 | TRANS NPN DARL 100V 8A TO220-3 |
| BDX53C-S | onsemi | 5,979 | TRANS NPN DARL 100V 8A TO220 |
| BDX53CG | onsemi | 10 | TRANS NPN DARL 100V 8A TO220 |
| BDX53CTU | onsemi | 3,403 | TRANS NPN DARL 100V 8A TO220-3 |
















