BDV65

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Single

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

125W

JESD-609 Code :

e0

Power - Max :

125W

Surface Mount :

No

Pbfree Code :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A 4V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Number of Elements :

1

Operating Temperature (Max) :

150°C

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

60V

Current - Collector (Ic) (Max) :

12A

Package / Case :

TO-218-3

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Configuration :

Darlington

Terminal Finish :

Tin/Lead (Sn/Pb)

HTS Code :

8541.29.00.75

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Transistor Application :

AMPLIFIER

Frequency - Transition :

60MHz

Transition Frequency :

60MHz

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Case Connection :

COLLECTOR