BDV64A-S
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- Mfr.Part #
- BDV64A-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 12A SOT93
- Stock
- 16,739
- In Stock ：
- 16,739
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Supplier Device Package :
- SOT-93
- Number of Elements :
- 1
- Max Collector Current :
- 12A
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Collector Emitter Saturation Voltage :
- 2V
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Through Hole
- Power - Max :
- 3.5W
- Mount :
- Through Hole
- Transistor Type :
- PNP - Darlington
- Element Configuration :
- Single
- Max Power Dissipation :
- 3.5W
- Published :
- 1993
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector (Ic) (Max) :
- 12A
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- Collector Emitter Breakdown Voltage :
- 60V
- Min Operating Temperature :
- -65°C
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Pins :
- 3
- Base Part Number :
- BDV64
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 2mA
- Packaging :
- Tube
- Polarity :
- PNP
- Package / Case :
- TO-218-3
- Datasheets
- BDV64A-S
PNP - Darlington -65°C~150°C TJ 2mA 1 Elements TO-218-3 Tube Through Hole
BDV64A-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 5A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 20mA, 5A.The emitter base voltage can be kept at 5V for high efficiency.This product comes in a SOT-93 device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.
BDV64A-S Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93
BDV64A-S Applications
There are a lot of Bourns Inc.
BDV64A-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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