BDV64B
- Mfr.Part #
- BDV64B
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 10A SOT93
- Stock
- 3,027
- In Stock :
- 3,027
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 100V
- Power Dissipation :
- 125W
- Number of Elements :
- 1
- Surface Mount :
- No
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 125W
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Through Hole
- Max Collector Current :
- 10A
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Element Configuration :
- Single
- hFE Min :
- 1000
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Polarity :
- PNP
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Package / Case :
- TO-247-3
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- PNP - Darlington
- Voltage - Rated DC :
- -100V
- Transition Frequency :
- 0.1MHz
- Published :
- 2002
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Emitter Saturation Voltage :
- 2V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- Current Rating :
- -10A
- Packaging :
- Tube
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- BDV64B

PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV64BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.1MHz.During maximum operation, collector current can be as low as 10A volts.
BDV64BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 0.1MHz
BDV64BG Applications
There are a lot of ON Semiconductor
BDV64BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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