BDV64B
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- Mfr.Part #
- BDV64B
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 10A SOT93
- Stock
- 3,027
- In Stock ：
- 3,027
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 10A
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Polarity :
- PNP
- Radiation Hardening :
- No
- Current Rating :
- -10A
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Transistor Type :
- PNP - Darlington
- Collector Emitter Saturation Voltage :
- 2V
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- hFE Min :
- 1000
- Pbfree Code :
- yes
- Power Dissipation :
- 125W
- Published :
- 2002
- Surface Mount :
- No
- Max Power Dissipation :
- 125W
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 1mA
- Voltage - Rated DC :
- -100V
- Transition Frequency :
- 0.1MHz
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-247-3
- Datasheets
- BDV64B
BDV64B Documents
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV64BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.1MHz.During maximum operation, collector current can be as low as 10A volts.
BDV64BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 0.1MHz
BDV64BG Applications
There are a lot of ON Semiconductor
BDV64BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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