BDV65B
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- Mfr.Part #
- BDV65B
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 10A SOT93
- Stock
- 3,842
- In Stock ：
- 3,842
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-247-3
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e3
- Max Collector Current :
- 10A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- ECCN Code :
- EAR99
- Power Dissipation :
- 125W
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Polarity :
- NPN
- Current - Collector Cutoff (Max) :
- 1mA
- Packaging :
- Tube
- Surface Mount :
- No
- Voltage - Rated DC :
- 100V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- hFE Min :
- 1000
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Max Power Dissipation :
- 125W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2V
- Factory Lead Time :
- 2 Weeks
- REACH SVHC :
- No SVHC
- Published :
- 2002
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 100V
- Current Rating :
- 10A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -65°C~150°C TJ
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Transistor Type :
- NPN - Darlington
- Datasheets
- BDV65B
BDV65B Documents
NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV65BG Overview
This device has a DC current gain of 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 20mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.
BDV65BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
BDV65BG Applications
There are a lot of ON Semiconductor
BDV65BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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