BDV64C-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

2mA

Polarity :

PNP

Mount :

Through Hole

Length :

15.2mm

Current - Collector (Ic) (Max) :

12A

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A 4V

Mounting Type :

Through Hole

Max Operating Temperature :

150°C

Power - Max :

3.5W

Number of Pins :

3

Height :

12.2mm

Max Collector Current :

12A

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

120V

Current :

12A

Published :

1993

Number of Elements :

1

Min Operating Temperature :

-65°C

Collector Emitter Saturation Voltage :

2V

Operating Temperature :

-65°C~150°C TJ

hFE Min :

1000

Supplier Device Package :

SOT-93

Package / Case :

TO-218-3

Collector Emitter Breakdown Voltage :

120V

Voltage - Collector Emitter Breakdown (Max) :

120V

Packaging :

Tube

Width :

4.9mm

Element Configuration :

Single

Base Part Number :

BDV64

Transistor Type :

PNP - Darlington

Vce Saturation (Max) @ Ib, Ic :

2V @ 20mA, 5A

Max Power Dissipation :

3.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage :

120V

Collector Base Voltage (VCBO) :

120V