BDV64BG
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- Mfr.Part #
- BDV64BG
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 10A TO247-3
- Stock
- 101
- In Stock ：
- 101
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1mA
- Current Rating :
- -10A
- JESD-609 Code :
- e3
- Package / Case :
- TO-247-3
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 100V
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 2 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 100V
- Lead Free :
- Lead Free
- Power Dissipation :
- 125W
- Number of Elements :
- 1
- Max Power Dissipation :
- 125W
- Pin Count :
- 3
- Polarity :
- PNP
- ECCN Code :
- EAR99
- Published :
- 2002
- Voltage - Rated DC :
- -100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 10A
- hFE Min :
- 1000
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 2V
- Pbfree Code :
- yes
- Transistor Type :
- PNP - Darlington
- Transition Frequency :
- 0.1MHz
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Datasheets
- BDV64BG
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV64BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.1MHz.During maximum operation, collector current can be as low as 10A volts.
BDV64BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 0.1MHz
BDV64BG Applications
There are a lot of ON Semiconductor
BDV64BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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