BD442S

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

15

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Voltage - Rated DC :

-80V

Weight :

761mg

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

-5V

Current Rating :

-4A

Collector Emitter Voltage (VCEO) :

80V

Collector Base Voltage (VCBO) :

-80V

Collector Emitter Saturation Voltage :

-800mV

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Lead Free :

Lead Free

Base Part Number :

BD442

Package / Case :

TO-225AA, TO-126-3

Max Collector Current :

4A

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 500mA 1V

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Transistor Type :

PNP

JESD-609 Code :

e3

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

800mV @ 200mA, 2A

Power Dissipation :

36W

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Pins :

3

Collector Emitter Breakdown Voltage :

80V

Frequency :

3MHz

Number of Elements :

1

Gain Bandwidth Product :

3MHz

Max Power Dissipation :

36W

Transition Frequency :

3MHz