BD440S

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Mfr.Part #
BD440S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 4A TO126-3
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
ECCN Code :
EAR99
hFE Min :
25
Current Rating :
-4A
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
36W
Vce Saturation (Max) @ Ib, Ic :
800mV @ 200mA, 2A
Collector Emitter Voltage (VCEO) :
60V
Max Collector Current :
4A
Published :
2017
Gain Bandwidth Product :
3MHz
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time :
2 Weeks
Operating Temperature :
150°C TJ
Power Dissipation :
36W
Mount :
Through Hole
Contact Plating :
Tin
Collector Base Voltage (VCBO) :
-60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 500mA 1V
Voltage - Rated DC :
-60V
Transistor Element Material :
SILICON
Pbfree Code :
yes
Transition Frequency :
3MHz
Radiation Hardening :
No
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Collector Emitter Saturation Voltage :
-800mV
Packaging :
Bulk
Emitter Base Voltage (VEBO) :
-5V
Package / Case :
TO-225AA, TO-126-3
Number of Terminations :
3
Mounting Type :
Through Hole
Transistor Type :
PNP
Element Configuration :
Single
Base Part Number :
BD440
Collector Emitter Breakdown Voltage :
60V
Weight :
761mg
Frequency :
3MHz
Lead Free :
Lead Free
Polarity/Channel Type :
PNP
Current - Collector Cutoff (Max) :
100μA
Introducing Transistors - Bipolar (BJT) - Single onsemi BD440S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:BD440, BD440S pinout, BD440S datasheet PDF, BD440S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD440S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD440S


PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD440S Overview


This device has a DC current gain of 40 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -800mV.A VCE saturation (Max) of 800mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 4A volts is possible.

BD440S Features


the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz


BD440S Applications


There are a lot of ON Semiconductor
BD440S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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