BD442
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- Mfr.Part #
- BD442
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A SOT32
- Stock
- 18,905
- In Stock ：
- 18,905
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 1V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -80V
- Pin Count :
- 3
- Element Configuration :
- Single
- Max Collector Current :
- 4A
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 800mV
- Collector Emitter Breakdown Voltage :
- 80V
- Factory Lead Time :
- 2 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- hFE Min :
- 15
- Published :
- 2005
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Transistor Element Material :
- SILICON
- Current Rating :
- -4A
- JESD-609 Code :
- e3
- Base Part Number :
- BD442
- Collector Emitter Voltage (VCEO) :
- 80V
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Contact Plating :
- Tin
- Frequency :
- 3MHz
- Power Dissipation :
- 36W
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Elements :
- 1
- Max Power Dissipation :
- 36W
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 3MHz
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Packaging :
- Bulk
- Datasheets
- BD442
BD442 Documents
PNP -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD442G Overview
This device has a DC current gain of 40 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 800mV.A VCE saturation (Max) of 800mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 4A volts is possible.
BD442G Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD442G Applications
There are a lot of ON Semiconductor
BD442G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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