BD442

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Mfr.Part #
BD442
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 4A TO126
Stock
18,905
In Stock :
18,905

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
2 Weeks
Contact Plating :
Tin
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
800mV @ 300mA, 3A
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
260
Collector Emitter Breakdown Voltage :
80V
hFE Min :
15
Package / Case :
TO-225AA, TO-126-3
Voltage - Rated DC :
-80V
Max Power Dissipation :
36W
Base Part Number :
BD442
Current Rating :
-4A
Transistor Type :
PNP
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 500mA 1V
Collector Emitter Saturation Voltage :
800mV
Emitter Base Voltage (VEBO) :
5V
Time@Peak Reflow Temperature-Max (s) :
40
Frequency :
3MHz
Surface Mount :
No
Transition Frequency :
3MHz
Number of Pins :
3
Power Dissipation :
36W
Gain Bandwidth Product :
3MHz
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Max Collector Current :
4A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Transistor Element Material :
SILICON
Element Configuration :
Single
Published :
2005
Collector Emitter Voltage (VCEO) :
80V
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
100μA ICBO
Lead Free :
Lead Free
ECCN Code :
EAR99
Polarity/Channel Type :
PNP
Pin Count :
3
Number of Terminations :
3
Packaging :
Bulk
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
80V
Datasheets
BD442
Introducing Transistors - Bipolar (BJT) - Single onsemi BD442 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Base Part Number:BD442, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, BD442 pinout, BD442 datasheet PDF, BD442 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD442 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD442


PNP -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD442G Overview


This device has a DC current gain of 40 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 800mV.A VCE saturation (Max) of 800mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 4A volts is possible.

BD442G Features


the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 3MHz


BD442G Applications


There are a lot of ON Semiconductor
BD442G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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