BD442STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

-80V

Current Rating :

-4A

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 500mA 1V

Transistor Application :

SWITCHING

Transition Frequency :

3MHz

hFE Min :

15

Packaging :

Tube

Gain Bandwidth Product :

3MHz

JESD-609 Code :

e3

Max Power Dissipation :

36W

Emitter Base Voltage (VEBO) :

-5V

Polarity/Channel Type :

PNP

Current - Collector Cutoff (Max) :

100μA

Collector Emitter Saturation Voltage :

-800mV

Contact Plating :

Tin

Pbfree Code :

yes

Frequency :

3MHz

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

80V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Collector Emitter Breakdown Voltage :

80V

Radiation Hardening :

No

Voltage - Rated DC :

-80V

Transistor Type :

PNP

Weight :

761mg

ECCN Code :

EAR99

Max Collector Current :

4A

Lead Free :

Lead Free

Mounting Type :

Through Hole

Factory Lead Time :

2 Weeks

Number of Pins :

3

Base Part Number :

BD442

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Elements :

1

Mount :

Through Hole

Package / Case :

TO-225AA, TO-126-3

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

800mV @ 200mA, 2A

Power Dissipation :

36W