BD441G

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Mfr.Part #
BD441G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 80V 4A TO126
Stock
3,224
In Stock :
3,224

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Rated DC :
80V
Packaging :
Bulk
Polarity/Channel Type :
NPN
ECCN Code :
EAR99
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Pbfree Code :
yes
Base Part Number :
BD441
Pin Count :
3
Number of Elements :
1
Frequency :
3MHz
Published :
2000
Factory Lead Time :
2 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Transistor Application :
SWITCHING
Terminal Finish :
Tin (Sn)
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 500mA 1V
RoHS Status :
ROHS3 Compliant
Current Rating :
4A
Emitter Base Voltage (VEBO) :
5V
Vce Saturation (Max) @ Ib, Ic :
800mV @ 300mA, 3A
Number of Terminations :
3
Transition Frequency :
3MHz
Collector Emitter Voltage (VCEO) :
80V
Surface Mount :
No
Mounting Type :
Through Hole
Element Configuration :
Single
Gain Bandwidth Product :
3MHz
Operating Temperature :
-55°C~150°C TJ
Max Collector Current :
4A
Package / Case :
TO-225AA, TO-126-3
Collector Base Voltage (VCBO) :
80V
hFE Min :
15
Collector Emitter Saturation Voltage :
800mV
REACH SVHC :
No SVHC
Time@Peak Reflow Temperature-Max (s) :
40
Radiation Hardening :
No
Transistor Type :
NPN
Collector Emitter Breakdown Voltage :
80V
Current - Collector Cutoff (Max) :
100μA ICBO
Power Dissipation :
36W
Lead Free :
Lead Free
Max Power Dissipation :
36W
Introducing Transistors - Bipolar (BJT) - Single onsemi BD441G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD441, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-225AA, TO-126-3, BD441G pinout, BD441G datasheet PDF, BD441G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD441G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD441G


NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD441G Overview


In this device, the DC current gain is 40 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 300mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).3MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

BD441G Features


the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz


BD441G Applications


There are a lot of ON Semiconductor
BD441G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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