BC857BS

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

HTS Code :

8541.21.00.95

Collector Emitter Saturation Voltage :

-400mV

Number of Pins :

6

Max Power Dissipation :

200mW

Height :

1mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Current - Collector Cutoff (Max) :

15nA ICBO

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Contact Plating :

Tin

Gain Bandwidth Product :

100MHz

Mount :

Surface Mount

Polarity :

PNP

Max Collector Current :

100mA

Published :

2007

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Weight :

6.010099mg

Collector Base Voltage (VCBO) :

-50V

Element Configuration :

Dual

Pbfree Code :

yes

Mounting Type :

Surface Mount

Width :

1.35mm

Transistor Type :

2 PNP (Dual)

Collector Emitter Breakdown Voltage :

-45V

Package / Case :

6-TSSOP, SC-88, SOT-363

Length :

2.2mm

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

15 Weeks

Transistor Element Material :

SILICON

Max Breakdown Voltage :

45V

Transition Frequency :

100MHz

Emitter Base Voltage (VEBO) :

-5V

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

45V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Pin Count :

6

Power Dissipation :

200mW