BC857BS

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power Dissipation :

200mW

Emitter Base Voltage (VEBO) :

-5V

Max Breakdown Voltage :

45V

REACH SVHC :

No SVHC

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Element Configuration :

Dual

Gain Bandwidth Product :

100MHz

Package / Case :

6-TSSOP, SC-88, SOT-363

Pin Count :

6

Collector Base Voltage (VCBO) :

-50V

Collector Emitter Voltage (VCEO) :

45V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Transition Frequency :

100MHz

Max Power Dissipation :

200mW

HTS Code :

8541.21.00.95

Transistor Type :

2 PNP (Dual)

Polarity :

PNP

Lead Free :

Lead Free

Weight :

6.010099mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

15nA ICBO

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Width :

1.35mm

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Height :

1mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Pbfree Code :

yes

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Length :

2.2mm

ECCN Code :

EAR99

Mount :

Surface Mount

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

-400mV

Published :

2007

Number of Terminations :

6

Factory Lead Time :

15 Weeks

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

-45V