BC849CW
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- Mfr.Part #
- BC849CW
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 11,231
- In Stock ：
- 11,231
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Base Part Number :
- BC849
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SC-70, SOT-323
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 30V
- Height :
- 1mm
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Power Dissipation :
- 200mW
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- VCEsat-Max :
- 0.6 V
- Gain Bandwidth Product :
- 100MHz
- hFE Min :
- 420
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 200mW
- Width :
- 1.35mm
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Pins :
- 3
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Saturation Voltage :
- 600mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 2.2mm
- Datasheets
- BC849CW
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849CW,115 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849CW,115 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849CW,115 Applications
There are a lot of Nexperia USA Inc.
BC849CW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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