BC848CPDW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power Dissipation :

380mW

Pin Count :

6

Number of Elements :

2

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

30V

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

30V

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

380mW

Contact Plating :

Tin

Length :

2.2mm

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

30V

Published :

2009

Polarity :

NPN, PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Max Breakdown Voltage :

40V

Element Configuration :

Dual

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN, PNP

Collector Emitter Saturation Voltage :

600mV

Power - Max :

250mW

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Gain Bandwidth Product :

100MHz

Current - Collector Cutoff (Max) :

15nA ICBO

hFE Min :

270

Collector Emitter Breakdown Voltage :

30V

Height :

1mm

Current Rating :

100mA

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-609 Code :

e3

Frequency :

100MHz

Width :

1.35mm

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

100mA

Factory Lead Time :

8 Weeks

Transition Frequency :

100MHz