BC848CE6327HTSA1
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- Mfr.Part #
- BC848CE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT-23
- Stock
- 50,585
- In Stock ：
- 50,585
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 600mV
- Width :
- 1.3mm
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Published :
- 2001
- Mount :
- Surface Mount
- Height :
- 1mm
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 330mW
- Contact Plating :
- Tin
- Frequency :
- 250MHz
- Base Part Number :
- BC848
- Power Dissipation :
- 330mW
- Length :
- 2.9mm
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 600mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Transition Frequency :
- 250MHz
- Current Rating :
- 100mA
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Voltage :
- 30V
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Current :
- 100mA
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 30V
- Halogen Free :
- Not Halogen Free
- Collector Base Voltage (VCBO) :
- 30V
- Datasheets
- BC848CE6327HTSA1
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC848CE6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC848CE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BC848CE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC848CE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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