BC847S

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Breakdown Voltage :

45V

JESD-609 Code :

e3

Mount :

Surface Mount

Max Breakdown Voltage :

60V

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Pbfree Code :

yes

Transistor Type :

2 NPN (Dual)

ECCN Code :

EAR99

Number of Pins :

6

Mounting Type :

Surface Mount

Current Rating :

200mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Gain Bandwidth Product :

200MHz

Max Power Dissipation :

300mW

Collector Base Voltage (VCBO) :

50V

Collector Emitter Voltage (VCEO) :

45V

hFE Min :

110

Length :

2mm

Transition Frequency :

200MHz

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Frequency :

200MHz

Factory Lead Time :

51 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 2mA 5V

Lead Free :

Lead Free

Published :

2000

Transistor Application :

AMPLIFIER

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

15nA ICBO

Transistor Element Material :

SILICON

Base Part Number :

BC847S

Emitter Base Voltage (VEBO) :

6V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Tin

Number of Terminations :

6

Max Collector Current :

200mA

RoHS Status :

RoHS Compliant

Weight :

28mg

Number of Elements :

2

Width :

1.25mm

Polarity :

NPN

REACH SVHC :

No SVHC

Power Dissipation :

300mW

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

650mV

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 6 days ago)

Height :

1mm

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

45V