BC847CWT3G
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- Mfr.Part #
- BC847CWT3G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC70-3
- Stock
- 16,880
- In Stock ：
- 16,880
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Power Dissipation :
- 150mW
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Package / Case :
- SC-70, SOT-323
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Power Dissipation :
- 150mW
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Number of Elements :
- 1
- Element Configuration :
- Single
- hFE Min :
- 270
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Published :
- 2007
- Contact Plating :
- Tin
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BC847CWT3G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847CWT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BC847CWT3G Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847CWT3G Applications
There are a lot of ON Semiconductor
BC847CWT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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