BC847CW,135
- Mfr.Part #
- BC847CW,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC847CW - SMALL SIG
- Stock
- 1,673,626
- In Stock :
- 1,673,626
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Base Part Number :
- BC847
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Transition Frequency :
- 100MHz
- Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2014
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 200mW
- Series :
- Automotive, AEC-Q101
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Power Dissipation :
- 200mW
- Package / Case :
- SC-70, SOT-323
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BC847CW,135

NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847CW,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC847CW,135 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847CW,135 Applications
There are a lot of Nexperia USA Inc.
BC847CW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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