BC847CE6327HTSA1
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- Mfr.Part #
- BC847CE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23
- Stock
- 22,597
- In Stock ：
- 22,597
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 330mW
- Collector Base Voltage (VCBO) :
- 50V
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Base Part Number :
- BC847
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 45V
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Halogen Free :
- Not Halogen Free
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 600mV
- Published :
- 2007
- Pbfree Code :
- yes
- Height :
- 1mm
- Collector Emitter Voltage (VCEO) :
- 600mV
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- 100mA
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Width :
- 1.3mm
- Frequency :
- 250MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Power Dissipation :
- 330mW
- Transition Frequency :
- 250MHz
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Datasheets
- BC847CE6327HTSA1
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847CE6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 420 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 250MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847CE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BC847CE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC847CE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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